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| www..com IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case Electrically Isolated Back Surface Preliminary Data Sheet D1 VCES = 600 V = 28 A IC25 VCE(sat) = 2.3 V tfi(typ) = 80 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg FC VISOL Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 110C TC = 110C (IXGC16N60B2D1 diode) TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 22 Clamped inductive load TC = 25C Maximum Ratings 600 600 20 30 28 13 10 100 ICM = 32 @0.8 VCES 63 -55 ... +150 150 -55 ... +150 V V V V A A A A A W C C C N/lb. V C g ISOPLUS 220TM (IXGC) E153432 G C E Isolated back surface* G = Gate E = Emitter C = Collector Mounting Force Isolation Voltage; 50/60Hz; t = 1minute; RMS Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 11..65/2.5..15 2500 300 2 Features DCB Isolated mounting tab UL recognized (E153432) Meets TO-273 package Outline High current handling capability MOS Gate turn-on - drive simplicity Epoxy meets UL94V-0 flammability classification Applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages Easy assembly High power density Very fast switching speeds for high frequency applications Weight Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.5 16N60B2 16N60B2D1 5.0 25 50 100 2.3 TJ=125C 1.8 V A A nA V V VGE(th) ICES IGES VCE(sat) IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 12 A, VGE = 15 V Note 2 (c) 2004 IXYS All rights reserved DS99173A(11/04) www..com IXGC 16N60B2 IXGC 16N60B2D1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 8 12 780 55 65 19 S pF pF pF pF nC nC nC ns ns 150 150 260 ns ns mJ ns ns mJ mJ ns ns mJ 2.0 K/W K/W ISOPLUS220 Outline Symbol Test Conditions gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = 12A; VCE = 10 V, Note 2. VCE = 25 V, VGE = 0 V, f = 1 MHz 16N60B2 16N60B2D1 IC = 20A, VGE = 15 V, VCE = 0.5 VCES 32 6 10 Inductive load, TJ = 125C IC = 12A; VGE = 15 V VCE = 400 V; RG = Roff = 22 Note 1 25 15 70 80 150 25 Inductive load, TJ = 125C IC = 12A; VGE = 15 V VCE = 400 V; RG = Roff = 22 Note 1 18 16N60B2 16N60B2D 1 0.38 0.8 110 170 350 0.25 Reverse Diode (FRED) Symbol VF IRM trr trr RthJC Notes: Test Conditions IF = 10 A, VGE = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 125C 2.5 110 30 2.66 1.66 V V A ns ns 2.5 K/W IF = 12 A; -diF/dt = 100 A/s, VR = 100 V VGE = 0 V; TJ = 125C IF = 1 A; -diF/dt = 100 A/s; VR = 30 V, VGE = 0 V 1. Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ, or increased RG. 2. Pulse test, t < 300 ms, duty cycle d < 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 |
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